Startup profile for Transphorm: latest funding, latest known valuation, total disclosed funding, investors, status, sources, and why the company is interesting. Part of the Venture Capital Tracker startup directory.

Startup profile · funding coverage

Transphorm funding, valuation and investors

Goleta GaN power semiconductor company — UCSB spinout acquired by Renesas (June 2024) after NASDAQ: TGAN run.

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Funding, valuation & investors

Answer-first snapshot

Latest funding

Not publicly disclosed

Latest known valuation

Not publicly disclosed

Total disclosed equity funding

Not publicly disclosed

Excludes debt, grants, acquisitions, secondaries, and IPO proceeds.

Current status

acquired

Stage not recorded · Goleta, California

Source links not recorded Last verified: 2026-07-29

Overview

Transphorm designs and manufactures gallium nitride (GaN) power transistors and modules for high-voltage power conversion in data centers, EVs, and industrial applications. Founded in 2007 as a UCSB spinout, the company was headquartered in Goleta, California. Transphorm went public on NASDAQ (TGAN) and in January 2024 entered an agreement to be acquired by Renesas Electronics for $339 million; the deal closed in June 2024. Transphorm operates as a Renesas subsidiary with Goleta manufacturing and R&D.

Why Transphorm is interesting

Central Coast power-electronics proof point: Transphorm commercialized UCSB gallium nitride (GaN) transistors for high-voltage conversion, went public (TGAN), then sold to Renesas for $339M (Jan 2024 agreement, closed Jun 2024) — the photonics/power cluster beyond AppFolio SaaS.

Product & use cases

High-voltage GaN power devices and modules for efficient power conversion in computing, automotive, and industrial systems.

  • Data center power supplies
  • EV onboard chargers and adapters
  • Industrial motor drives

Key facts

  • UCSB spinout — GaN power transistors (Goleta HQ)
  • NASDAQ: TGAN before Renesas acquisition
  • Renesas deal: $339M (agreement Jan 2024, closed Jun 2024)
  • 1,000+ GaN patent portfolio cited in acquisition materials

Funding history (newest first)

IPO

2021
  • Public markets (NASDAQ: TGAN) (lead)

Competitive landscape

Edge: GaN efficiency and power density versus silicon — JEDEC/AEC-Q101 qualified devices in acquisition PR.

  • Infineon / GaN Systems-class direct

    GaN power semiconductor competitors.

  • Silicon MOSFET incumbents incumbent

    Lower-cost but less efficient alternatives.

Industries

Hardware & Semiconductors Deep Tech Climate Tech

Related funding articles

Venture Capital Tracker pieces that cover Transphorm's financing or category context.

FAQs about Transphorm

Practical answers founders, operators, and investors typically search for.

Designs and manufactures gallium nitride (GaN) power semiconductors for high-voltage conversion.
Goleta, California (75 Castilian Drive) — Santa Barbara metro in our city matching.
Renesas Electronics — $339M deal announced January 2024, closed June 2024.
Acquired — formerly NASDAQ: TGAN; now a Renesas subsidiary.
Founded 2007 as a UCSB spinout; co-founder Umesh Mishra is a UCSB professor.
It validates the Central Coast photonics/power-electronics cluster beyond software — a hardware exit path adjacent to Sonos and Apeel.

By Venture Capital Tracker

Last updated:

Editorial note: AI tools assisted with research, structure, or drafting. Venture Capital Tracker retains human editorial responsibility for factual accuracy, relevance, and source quality before publication.